Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf0.5Zr0.5O2 ferroelectric field effect transistors-Reference-Cited by-同舟云学术

Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf0.5Zr0.5O2 ferroelectric field effect transistors

Published:2023-07 Issue: Volume:205 Page:108657
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cheng Ran,Li Xinze,Zeng Yiqin^ORCID,Yu Xiao^ORCID,Peng Yue,Chen Bing,Han Genquan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

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2. Demonstration of ferroelectricity in Al-doped HfO2 with a low thermal budget of 500 °C;Zhou;IEEE Electron Device Lett,2020

3. Gong T, Tao L, Li J, Cheng Y, Xu Y, Wei W, et al. 105×Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications. In: IEEE symp. VLSI technol.. 2021, p. 1–2.

4. Performance improvement of Hf0.5Zr0.5O2-based ferroelectric-field-effect transistors with ZrO2 seed layers;Xiao;IEEE Electron Device Let.,2019

5. Experimental demonstration of gate-level logic camouflaging and run-time reconfigurability using ferroelectric FET for hardware security;Dutta;IEEE Trans Electron Devices,2021

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