Fabrication of particle free epitaxal AlN thin films by reactive PLD combined with an electron beam and a rotating crucible
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference14 articles.
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4. Epitaxial Growth of AlN Thin Films on Sapphire by Pulsed Laser Deposition and Effect of N2Ambient on Crystallinity
5. Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2
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1. The evolution of preferred orientation and morphology of AlN films under various sputtering parameters;Journal of Crystal Growth;2024-01
2. Analysis of residual thermal stress for AlN crystal growth by PVT;Vacuum;2023-08
3. Periodic behavior of reflectance and transmittance from a thin film due to optical interference; The case of AlN nanostructure films;Surfaces and Interfaces;2022-06
4. Achieve 2-inch-diameter homogeneous GaN films on sapphire substrates by pulsed laser deposition;Journal of Materials Science;2014-01-30
5. Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition;Journal of Physics D: Applied Physics;2013-02-12
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