Analysis of residual thermal stress for AlN crystal growth by PVT-Reference-Cited by-同舟云学术

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Analysis of residual thermal stress for AlN crystal growth by PVT

Published:2023-08 Issue: Volume:214 Page:112237
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Qin Z.Y.^ORCID,Li W.L.,Sun Z.H.,Ji J.H.^ORCID,Wu H.L.,Jin L.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference37 articles.

1. The 2020 UV emitter roadmap;Amano;J. Phys. D Appl. Phys.,2020

2. Improve efficiency and long lifetime UVC LEDs with wavelengths between 230 and 237 nm;Yoshikawa;APEX,2020

3. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates;Kalapala;Opto-Electronic Advances,2020

4. Vacuum-ultraviolet photovoltaic detector;Zheng;ACS Nano,2018

5. 3D-MSM AlN deep ultraviolet detector;Li;IEEE J. Quant. Electron.,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy;Journal of Crystal Growth;2024-01

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