Epitaxial Growth of AlN Thin Films on Sapphire by Pulsed Laser Deposition and Effect of N2Ambient on Crystallinity-Reference-Cited by-同舟云学术

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Epitaxial Growth of AlN Thin Films on Sapphire by Pulsed Laser Deposition and Effect of N2Ambient on Crystallinity

Published:1999-04-15 Issue:Part 1, No. 4A Volume:38 Page:2114-2115
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okamoto Mitsuo,Mori Yusuke,Sasaki Takatomo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering;Coatings;2021-04-12

2. High-quality Ge film grown on Si substrate and its thermodynamic mechanism;Vacuum;2021-04

3. Highly c-axis oriented AlN layers grown on c-plane sapphire substrates by radio-frequency sputter epitaxy at 1080°C;Thin Solid Films;2012-04

4. New Progressing Crystallization Technology of Membrane Protein and Introduction of Pharamaceutical Innovation Value Chain;YAKUGAKU ZASSHI;2008-04-01

5. Fabrication of particle free epitaxal AlN thin films by reactive PLD combined with an electron beam and a rotating crucible;Vacuum;2007-09

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