Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121955
Reference18 articles.
1. Light emission moves into the blue
2. Hole Compensation Mechanism of P-Type GaN Films
3. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films
4. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
5. Growth ofc‐axis oriented gallium nitride thin films on an amorphous substrate by the liquid‐target pulsed laser deposition technique
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