Nitrogen plasma treatment of a TiO2 layer for MIS ohmic contact on n-type Ge substrate-Reference-Cited by-同舟云学术

Nitrogen plasma treatment of a TiO2 layer for MIS ohmic contact on n-type Ge substrate

Published:2020-01 Issue: Volume:171 Page:108996
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Yang Jheng-Ci,Huang Hsin-Fu,Li Jyun-Han,Lee Yao-Jen,Wang Yeong-Her

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

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5. Effects of Carbon Incorporation on Electrical Characteristics and Thermal Stability of Ti/TiO₂/n-Ge MIS Contact;IEEE Access;2022