Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons-Reference-Cited by-同舟云学术

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Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons

Published:2009-05 Issue: Volume:83 Page:S131-S133
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Korshunov F.P.,Lastovskii S.B.,Markevich V.P.,Murin L.I.,Bogatyrev Yu.V.,Peaker A.R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference11 articles.

1. Defect engineering in Czochralski silicon by electron irradiation at different temperatures

2. VO_n (n≥3) Defects in Irradiated and Heat-Treated Silicon

3. Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures

4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

5. Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of high-temperature annealing on the characteristics of fast electron-irradiated p-n-structures based on neutron doped silicon;Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series;2020-01-07

2. Defects in p-type Cz-silicon irradiated at elevated temperatures;physica status solidi (c);2012-08-27

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