Impact of annealing environment on performance of InWZnO conductive bridge random access memory
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference29 articles.
1. Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory
2. Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
3. Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory;Vacuum;2022-07
2. Resistive switching properties of amorphous Sm2Ti2O7 thin film prepared by RF sputtering for RRAM applications;Journal of Alloys and Compounds;2022-07
3. Radiation hardness of InWZnO thin film as resistive switching layer;Applied Physics Letters;2022-05-09
4. Enhanced resistive switching behavior of CH3NH3PbI3 based resistive random access memory by nickel doping;Vacuum;2022-04
5. Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique;Applied Physics Letters;2021-10-25
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