Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
Author:
Affiliation:
1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
2. Winbond Electronics Corporation, Hsinchu 30010, Taiwan
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4918679
Reference17 articles.
1. Memristive devices for computing
2. Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM
3. Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance
4. Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM
5. Oxide-based RRAM switching mechanism: A new ion-transport-recombination model
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