Oxide-based RRAM switching mechanism: A new ion-transport-recombination model-Reference-Cited by-同舟云学术

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Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

Published:2008-12 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Electron Devices Meeting
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Author:

Gao B.,Yu S.,Xu N.,Liu L.F.,Sun B.,Liu X.Y.,Han R.Q.,Kang J.F.,Yu B.,Wang Y.Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796751.pdf?arnumber=4796751

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