Design of a Current Sense Amplifier with Dynamic Reference for Reliable Resistive Memory
Author:
Affiliation:
1. Nanyang Technological University (NTU)
2. Institute of Microelectronics(IME),Agency for Science, Technology and Research,Singapore
Funder
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10198027/10198028/10198038.pdf?arnumber=10198038
Reference15 articles.
1. A high-Speed 7. 2-ns read-Write random access 4-Mb embedded resistive RAM (ReRAM) macro;schemes;IEEE J of Solid-State Circuits,2013
2. Embedded 1-Mb ReRAM-based computing-in-memory macro with multibit input and weight for CNN-based AI edge processors;xue;IEEE J of Solid-State Circuits,2019
3. Effects of Thermal Annealing on Ta2O5 based CMOS compatible RRAM
4. ReRAM Device and Circuit Co-Design Challenges in Nano-scale CMOS Technology
5. 7.4 A covalent-bonded cross-coupled current-mode sense amplifier for STT-MRAM with 1T1MTJ common source-line structure array;chankyung;in 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of Technical Papers,2015
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