Effect of a seed layer on microstructure and electrical properties of Ga2O3 films on variously oriented Si substrates
Author:
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference64 articles.
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4. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector;Singh Pratiyush;Appl. Phys. Lett.,2017
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