Affiliation:
1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University , Nanjing 210023 , P. R. China
Abstract
Abstract
Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (I
light/I
dark) of ∼104 and a ultraviolet/visible rejection ratio (R
260 nm/R
400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.
Funder
National Key R&D Program of China
State Key R&D Program of Jiangsu Province
Six-Talent Peaks Project of Jiangsu Province
Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center
PAPD
State Grid Shandong Electric Power Company
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
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