Comparisons of surface and optical properties of the heavily carbon-doped GaN nanocrystalline films deposited by thermionic vacuum arc method
Author:
Funder
ESOGU BAP Commission
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference21 articles.
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2. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy;Webb;Appl. Phys. Lett.,1999
3. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE;Kato;J. Cryst. Growth,2007
4. Carbon impurities and the yellow luminescence in GaN;Lyons;Appl. Phys. Lett.,2010
5. Mechanism of yellow luminescence in GaN;Ogino;Jpn. J. Appl. Phys.,1980
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