Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121144
Reference12 articles.
1. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
2. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
3. Yellow Luminescence and Hydrocarbon Contamination in MOVPE-Grown GaN
4. Ca and O ion implantation doping of GaN
5. CCl4 doping of GaN grown by metalorganic molecular beam epitaxy
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