Ion implantation of hydrogen and helium into silicon wafers for layer transfer in devices
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference12 articles.
1. Studies of co-implanted helium and hydrogen with an intermediate annealing step for thermal splitting of bonded silicon to oxide-coated wafers
2. Silicon-on-insulator substrates with buried tungsten silicide layer
3. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
4. Orientation dependence of blistering in H-implanted Si
5. Kinetic aspects of the growth of platelets and voids in H implanted Si
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2. Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions;Materials;2022-04-18
3. Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature;Materials;2020-12-15
4. Hydrogen Implantation in Germanium;ECS Transactions;2010-04-16
5. Surface blistering of low temperature annealed hydrogen and helium co-implanted germanium and its application to splitting of bonded wafer substrates;Vacuum;2009-05
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