Crystallization process in Ge2Sb2Te5 amorphous films-Reference-Cited by-同舟云学术

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Crystallization process in Ge2Sb2Te5 amorphous films

Published:2010-03 Issue:7 Volume:84 Page:877-881
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Morales-Sánchez E.,Lain B.,Prokhorov E.,Hernández-Landaverde M.A.,Trapaga G.,González-Hernández J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference19 articles.

1. Optical data storage, phase-change media and recording;Meinders,2006

2. Reversible switching in phase-change materials;Wełnic;Mater Today,2008

3. Fast phase transition process of Ge2Sb2Te5 films induced by picosecond laser pulses with identical fluences;Huang;J Appl Phys,2009

4. Transient phase change effect during the crystallization process in phase change memory devices;Yeo;Appl Phys Lett,2009

5. Comparison of the crystallization of Ge–Sb–Te and Si–Sb–Te in a constant-temperature annealing process;Zhang;Scr Mater,2008

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1. Optical properties of as-deposited, annealed and laser-treated Ge₂Sb₂Te₅ thin films;Optical Materials Express;2022-06-30

2. Wavelength-selective, tunable and switchable plasmonic perfect absorbers based on phase change materials Ge2Sb2Te5;EPL (Europhysics Letters);2020-02-05

3. Compositional dependence of crystallization kinetics in Zr-Ni-Al metallic glasses;Vacuum;2018-05

4. Synthesis and Screening of Phase Change Chalcogenide Thin Film Materials for Data Storage;ACS Combinatorial Science;2017-06-12

5. Structural characterization and optical properties of pulsed laser deposition of Se75Te25 and Se75Te17Ge8 amorphous thin films;Materials Science in Semiconductor Processing;2015-11

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