Transient phase change effect during the crystallization process in phase change memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3155200
Reference10 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Understanding the phase-change mechanism of rewritable optical media
3. The role of vacancies and local distortions in the design of new phase-change materials
4. Time-resolved analysis of the set process in an electrical phase-change memory device
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1. Breaking the Speed Limits of Phase-Change Memory;Science;2012-06-22
2. Electrochemical Metallization Resistive Memory Devices Using $\hbox{ZnS-SiO}_{2}$ as a Solid Electrolyte;IEEE Electron Device Letters;2012-01
3. TRANSIENT PHASE CHANGE ANALYSIS OF SCALING IN PHASE CHANGE DEVICES;International Journal of Nanoscience;2010-08
4. Crystallization process in Ge2Sb2Te5 amorphous films;Vacuum;2010-03
5. Parasitic capacitance effect on programming performance of phase change random access memory devices;Applied Physics Letters;2010-01-25
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