Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3222851
Reference29 articles.
1. Characterization of Amorphous Phases of Ge2Sb2Te5Phase-Change Optical Recording Material on Their Crystallization Behavior
2. IEEE International Conference;Nishiuchi K.,2003
3. Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory
4. Electrical Properties of Ag-Doped Ge 2 Sb 2 Te 5 Films Used for Phase Change Random Access Memory
5. Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory
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