Low MOCVD growth temperature controlled phase transition of Ga2O3 films for ultraviolet sensing
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference52 articles.
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1. Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity;Journal of Materials Chemistry C;2024
2. Proton Irradiation Effects in MOCVD Grown β-Ga2O3 and ε-Ga2O3 Thin Films;IEEE Transactions on Nuclear Science;2024-01
3. Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD;Crystal Growth & Design;2023-12-18
4. Deep ultraviolet–visible highly responsivity self-powered photodetector based on β-Ga2O3/GaN heterostructure;Vacuum;2023-11
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