Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga<sub>2</sub>O<sub>3</sub> films by introducing Zn impurity-Reference-Cited by-同舟云学术

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga₂O₃ films by introducing Zn impurity

Published:2024 Issue:1 Volume:12 Page:118-124
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sun Xuan¹²,Liu Kewei¹²^ORCID,Chen Xing¹²,Zhu Yongxue¹^ORCID,Cheng Zhen¹,Yang Jialin¹,Li Binghui¹²,Liu Lei¹²^ORCID,Shen Dezhen¹²

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, People's Republic of China

2. Center of Materials Science and Optoelectronics Engineering, University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China

Abstract

In this work, pure and Zn-doped ε-Ga2O3 films were grown by MOVCD. The improvement in the crystalline quality and the UV photodetection performance of ε-Ga2O3 was demonstrated by introducing Zn impurity. The mechanism is also studied and discussed.

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

National Ten Thousand Talent Program

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC03599A

Reference53 articles.

1. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

2. Fabrication of composition-controlled MOCVD grown InxGa1-xN based MSM photodetectors

3. Observation of Anomalous Negative Photoconductivity in Ga₂O₃ Nanowires: Implications for Broadening the Spectral Response of Photodetectors

4. A Self-Powered High-Responsivity, Fast-Response-Speed Solar-Blind Ultraviolet Photodetector Based on CuO/β-Ga2O3 Heterojunction with Built-In Potential Control

5. An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A self-powered flexible UV photodetector based on an individual ZnO-amorphous Ga₂O₃ core–shell heterojunction microwire;Journal of Materials Chemistry C;2024