High throughput, high quality dry etching of copper/barrier film stacks-Reference-Cited by-同舟云学术

High throughput, high quality dry etching of copper/barrier film stacks

Published:2000-01 Issue:1-4 Volume:50 Page:417-423
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Markert M,Bertz A,Gessner T,Ye Y,Zhao A,Ma D

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Reactive ion etching of copper films in a SiCl4, N2, Cl2 and NH3 mixture;Ohno;J. Electrochem. Soc.,1996

2. Dry etching technique for subquarter-micron copper interconnects;Igarashi;J. Electrochem. Soc.,1995

3. Effects of the biasing frequency on RIE of Cu in a Cl2-based discharge;Bertz;Appl. Surf. Sci.,1995

4. Halogen based copper RIE-influence of the material characteristics and deposition processes;Bertz;Microelectronic Eng.,1997

5. Copper dry etching technique for ULSI interconnections;Markert;Microelectronic Eng.,1997

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