Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition
Author:
Funder
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.acs.org/doi/pdf/10.1021/acsomega.8b03163
Reference43 articles.
1. Effect of nitric acid on wet etching behavior of Cu/Mo for TFT application
2. Fast etching of copper in thionyl chloride/acetonitrile solutions
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4. Electromigration study of copper lines on steps prepared by a plasma-based etch process
5. High throughput, high quality dry etching of copper/barrier film stacks
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