Copper dry etching technique for ULSI interconnections-Reference-Cited by-同舟云学术

Copper dry etching technique for ULSI interconnections

Published:1997-02 Issue:1-4 Volume:35 Page:333-336
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Markert Matthias,Bertz Andreas,Gessner Thomas

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Semiconductor International;Wang,1995

2. Ext. Abstr. of the 22nd Intern. Conf. on Solid State Devices and Materials;Ohno,1990

3. Dry Etching Technique for Subquarter‐Micron Copper Interconnects

4. Effects of the biasing frequency on RIE of Cu in a Cl2-based discharge

5. EMRS Spring Meeting, Symposium J;Bertz,1996

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of applying air pressure during wet etching of micro copper PCB tracks with ferric chloride;International Journal of Materials Research;2022-08-17

2. Plasma oxidation as an effective method in etching copper interconnect lines at room-temperature;Japanese Journal of Applied Physics;2022-03-01

3. Chemical Etching and Patterning of Copper, Silver, and Gold Films at Low Temperatures;ECS Journal of Solid State Science and Technology;2014-10-29

4. Electromigration and integration aspects for the copper-SiLK system;Journal of Electronic Materials;2004-07

5. Hydrogen bromide plasma–copper reaction in a new copper etching process;Thin Solid Films;2004-06