Dry Etching Technique for Subquarter‐Micron Copper Interconnects

Author:

Igarashi Yasushi1,Yamanobe Tomomi1,Ito Toshio1

Affiliation:

1. Semiconductor Technology Laboratory, Oki Electric Industry Company, Limited, 550‐5 Higashiasakawa‐cho, Hachioji‐shi, Tokyo 193, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Chemical Etching and Patterning of Copper, Silver, and Gold Films at Low Temperatures;ECS Journal of Solid State Science and Technology;2014-10-29

2. Metallization;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

3. Wet and Dry Etching Materials;Handbook of Chemicals and Gases for the Semiconductor Industry;2002-07-15

4. High throughput, high quality dry etching of copper/barrier film stacks;Microelectronic Engineering;2000-01

5. Performance of vertical power devices with contact-level copper metallization;Thin Solid Films;1999-07

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