Surfactant-mediated growth of TiSi2 on Si(001)-Reference-Cited by-同舟云学术

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Surfactant-mediated growth of TiSi2 on Si(001)

Published:2002-10 Issue:1-4 Volume:64 Page:157-162
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hortenbach H,Falke M,Teichert S,Beddies G,Hinneberg H.-J

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Surfactants in epitaxial growth

2. Growing high-quality C60 films by using Sb buffer layer

3. Effect of atomic hydrogen on the growth of Ge/Si(100)

4. Surfactant adsorption site and growth mechanism of Ge- on Ga-terminated Si(111)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems;Defect and Diffusion Forum;2007-04

2. Surfactant effect of Sb on the growth of MnSi 1.7 layers on Si(0 0 1);Applied Surface Science;2006-11

3. Passivation of Si(001) by the surfactant Sb and its influence on the NiSi2 growth;Journal of Crystal Growth;2005-10

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