Passivation of Si(001) by the surfactant Sb and its influence on the NiSi2 growth-Reference-Cited by-同舟云学术

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Passivation of Si(001) by the surfactant Sb and its influence on the NiSi2 growth

Published:2005-10 Issue:3-4 Volume:283 Page:303-308
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mogilatenko Anna,Falke Meiken,Hortenbach Heiko,Teichert Steffen,Beddies Gunter,Hinneberg Hans-Jürgen

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Surfactants in epitaxial growth

2. Surfactant induced reversible changes of surface morphology

3. Surfactant-controlled solid phase epitaxy of germanium on silicon

4. Modification of growth kinetics in surfactant-mediated epitaxy

5. The Surfactant Effect in Semiconductor Thin-Film Growth

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001);RSC Advances;2021

2. Adjustment Cu3Si growth in the interface of annealed Cu-Zr alloy films/Si substrate to form inverted pyramid structure;Materials Letters;2019-11

3. Surfactant effect of Sb on the growth of MnSi 1.7 layers on Si(0 0 1);Applied Surface Science;2006-11

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