Influence of contamination on the electrical activity of crystal defects in silicon-Reference-Cited by-同舟云学术

Influence of contamination on the electrical activity of crystal defects in silicon

Published:2003-04 Issue:1-4 Volume:66 Page:281-288
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kittler Martin,Seifert Winfried,Knobloch Klaus

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Lifetime in Silicon

2. Characterization of the leakage-current diffusion component in intrinsically gettered silicon by EBIC

3. Depth profiling of the minority‐carrier diffusion length in intrinsically gettered silicon by electron‐beam‐induced current

4. On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigations

5. Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

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