Depth profiling of the minority‐carrier diffusion length in intrinsically gettered silicon by electron‐beam‐induced current
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339942
Reference13 articles.
1. New intrinsic gettering process in silicon based on interactions of silicon interstitials
2. Determination of Semiconductor Parameters and of the Vertical Structure of Devices by Numerical Analysis of Energy-Dependent EBIC Measurements
3. Comparison of EBIC and DLTS Measurements on Boron-Doped CZ Silicon Contaminated with Iron
4. Investigation of minority‐carrier diffusion lengths by electron bombardment of Schottky barriers
5. Characterization of the leakage-current diffusion component in intrinsically gettered silicon by EBIC
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