Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys

Published:2001-11 Issue:1-4 Volume:59 Page:385-391
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Johnson Robert S,Lucovsky Gerald,Goo Hong Joon

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: 1999 Edition (http://public.itrs.net).

2. Electrical Characterization of Al2O3 - SiO2 Mos Structures

3. Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

4. R.S. Johnson, J.G. Hong, G. Lucovsky, J. Vac. Sci. Tech. B19 (2001), in press.

5. Proc. of Characterization and Metrology for USLI Technology;Lucovsky;AIP Conf. Proc.,2001

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness;AIP Advances;2013-10

2. High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition;Applied Physics Express;2009-12-18

3. Properties of MIS Capacitors Using the Atomic-Layer-Deposited ZnO Semiconductor and Al[sub 2]O[sub 3] Insulator;Journal of The Electrochemical Society;2008

4. Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films;Journal of The Electrochemical Society;2004

5. Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si;Journal of Applied Physics;2003-07