Minimization of mechanical and chemical strain at dielectric-semiconductor and internal dielectric interfaces in stacked gate dielectrics for advanced CMOS devices-Reference-Cited by-同舟云学术

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Minimization of mechanical and chemical strain at dielectric-semiconductor and internal dielectric interfaces in stacked gate dielectrics for advanced CMOS devices

Published:2001 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
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Author:

Lucovsky Gerry

Publisher

AIP

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures;Strain Engineering in Functional Materials and Devices;2023-03-10

2. Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices;Radiation Effects and Defects in Solids;2016-03-03

3. Effects of Pre-annealing on Firing Stability of Atomic Layer-Deposited Al2O3;Israel Journal of Chemistry;2015-06-10

4. Modulation of atomic-layer-deposited Al2O3film passivation of silicon surface by rapid thermal processing;Applied Physics Letters;2011-08

5. Deposition and Properties of the Pseudobinary Alloy (Al2O3)x(TiO2)1-xand Its Application for Silicon Surface Passivation;Japanese Journal of Applied Physics;2006-07-07

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