Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing-Reference-Cited by-同舟云学术

Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

Published:1999 Issue: Volume:567 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Luan H. F.,Lee S. J.,Lee C. H.,Mao A. Y.,Vrtis R.,Roberts D.,Kwong D. L.

Abstract

ABSTRACTIn this paper, ultra thin CVD Ta2O5 stacked gate dielectrics (Teq∼14Å-22Å) was fabricated by in-situ RTP processing. The leakage current of Ta2O5 devices is 103× lower leakage current compared to SiO2 of identical thickness for devices with Teq between 18Å-22Å. While Teq<18Å, the leakage current follows same train and J∼10−3A/cm2 for Ta2O5 stacked gate dielectrics with Teq=14Å. Superior interface properties and reliability have been obtained.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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