Electron traps at interfaces between Si(100) and noncrystalline Al[sub 2]O[sub 3], Ta[sub 2]O[sub 5], and (Ta[sub 2]O[sub 5])[sub x](Al[sub 2]O[sub 3])[sub 1−x] alloys-Reference-Cited by-同舟云学术

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Electron traps at interfaces between Si(100) and noncrystalline Al[sub 2]O[sub 3], Ta[sub 2]O[sub 5], and (Ta[sub 2]O[sub 5])[sub x](Al[sub 2]O[sub 3])[sub 1−x] alloys

Published:2001 Issue:4 Volume:19 Page:1606
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Johnson R. S.,Hong J. G.,Lucovsky G.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown on Silicon by Atomic Layer Deposition;Nanoscale Research Letters;2019-03-04

2. Multifunctional Organic Phototransistor-based Nonvolatile Memory Achieved by UV/Ozone Treatment of the Ta2O5 Gate Dielectric;ACS Applied Materials & Interfaces;2014-05-20

3. Electrical properties of atomic layer deposited Al2O3 with anneal temperature for surface passivation;Thin Solid Films;2013-07

4. High performance low-voltage organic phototransistors: interface modification and the tuning of electrical, photosensitive and memory properties;Journal of Materials Chemistry;2012

5. Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-$k$ PMOS Application;IEEE Transactions on Electron Devices;2011-09

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