Novel plasma chemistries for highly selective dry etching of InxGaN1−x: BI3 and BBr3-Reference-Cited by-同舟云学术

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Novel plasma chemistries for highly selective dry etching of InxGaN1−x: BI3 and BBr3

Published:1999-05 Issue:1-3 Volume:59 Page:340-344
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Cho Hyun,Hong J,Maeda T,Donovan S.M,Abernathy C.R,Pearton S.J,Shul R.J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide;Applied Surface Science;2007-09

2. Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2Plasmas;Japanese Journal of Applied Physics;2003-10

3. Etching damage and its recovery in n-GaN by reactive ion etching;Physica B: Condensed Matter;2003-06

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