Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2Plasmas-Reference-Cited by-同舟云学术

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Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2Plasmas

Published:2003-10 Issue:Part 2, No. 10A Volume:42 Page:L1139-L1141
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Han Yanjun,Xue Song,Guo Wenping,Luo Yi,Hao Zhibiao,Sun Changzheng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=10A/a=L1139/pdf

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication;Electronics;2023-10-20

2. Suppression of Reverse Leakage in Enhancement‐Mode GaN High‐Electron‐Mobility Transistor by Extended PGaN Technology;physica status solidi (a);2023-05-31

3. Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas;Doklady BGUIR;2022-12-09

4. Performance improvement in NiO _x -based GaN MOS-HEMTs;Semiconductor Science and Technology;2022-06-21

5. Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch;Chinese Physics B;2022-01-01

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