Characterization of GaN layers grown on porous silicon-Reference-Cited by-同舟云学术

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Characterization of GaN layers grown on porous silicon

Published:2001-05 Issue:1-3 Volume:82 Page:98-101
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Missaoui A,Saadoun M,Boufaden T,Bessaı̈s B,Rebey A,Ezzaouia H,El Jani B

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

2. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon

3. Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy

4. GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer

5. Exciton and donor - acceptor recombination in undoped GaN on Si(111)

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved MOCVD growth of GaN on Si-on-porous-silicon substrates;physica status solidi (c);2010-04-26

2. Structure and transport mechanisms of Si/porous Si n–p junctions prepared by liquid phase epitaxy;Applied Surface Science;2009-01

3. MOCVD growth of GaN on porous silicon substrates;Journal of Crystal Growth;2008-11

4. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications;Journal of Physics D: Applied Physics;2007-10-21

5. Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy;Journal of Electronic Materials;2007-03-16

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