High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma-Reference-Cited by-同舟云学术

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High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma

Published:2002-07 Issue:1 Volume:95 Page:51-54
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Khan F.A,Zhou L,Kumar V,Adesida I,Okojie R

Funder

National Aeronautics and Space Administration

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. High temperature electron cyclotron resonance etching of GaN, InN, and AlN

2. Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides

3. High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

4. Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas

5. Inductively coupled plasma reactive ion etching of Al[sub x]Ga[sub 1−x]N for application in laser facet formation

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3. On the coupling effect in the RF-biased inductively coupled plasma with the synchronous control;Physics of Plasmas;2024-02-01

4. Development of high uniformity Al1-xScxN piezoelectric film stack dry etching process on 8-inch silicon wafers;Vacuum;2023-04

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