Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363320
Reference12 articles.
1. Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)
2. Reactive ion etching of GaN using BCl3
3. Reactive ion etching of gallium nitride using hydrogen bromide plasmas
4. Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas
5. Dry etching of thin-film InN, AlN and GaN
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