Oscillation of in-plane lattices constant of Ge islands during molecular beam epitaxy growth on Si
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
2. Surface processes and phase diagrams in MBE growth of heterostuctures
3. Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1−xGex hut islands
4. Strain Relaxation inInAs/GaAs(111)AHeteroepitaxy
5. Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length
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1. The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy;Semiconductor Science and Technology;2020-03-05
2. Sn influence on MBE growth of GeSiSn/Si MQW;Journal of Physics: Conference Series;2017-03
3. Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy;Semiconductors;2015-12
4. Ge/Si Heterostructures with Dense Chains of Stacked Quantum Dots;Journal of Nanoelectronics and Optoelectronics;2014-04-01
5. Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth;Thin Solid Films;2014-04
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