Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy

Published:2015-12 Issue:12 Volume:49 Page:1582-1586
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tuktamyshev A. R.,Mashanov V. I.,Timofeev V. A.,Nikiforov A. I.,Teys S. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615120222.pdf

Reference21 articles.

1. R. A. Soref, J. Kouvetakis, J. Tolle, J. Menendez, and V. D’Costa, J. Mater. Res. 22, 3281 (2007).

2. V. R. D’Costa, Y. Y. Fang, J. Tolle, J. Kouvetakis, and J. Menendez, Phys. Rev. Lett. 102, 107403 (2009).

3. R. A. Soref, J. Vac. Sci. Technol. A 14, 913 (1996).

4. G. Sun, H. H. Cheng, J. Menendez, J. B. Khurgin, and R. A. Soref, Appl. Phys. Lett. 90, 251105 (2007).

5. G. Sun, R. A. Soref, and H. H. Cheng, Opt. Express 19, 19957 (2010).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers;Nanoscale Research Letters;2018-01-19

2. Molecular Beam Epitaxy Growth of SiGeSn Alloys;Molecular Beam Epitaxy;2018

3. Sn influence on MBE growth of GeSiSn/Si MQW;Journal of Physics: Conference Series;2017-03

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