Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. Epitaxial Growth – Part B;Van der Merwe,1975
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
4. Nucleation of ``Hut'' Pits and Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) inIn SituScanning Tunnelng Microscopy
5. The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on Si
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1. Evolution of Ge wetting layers growing on smooth and rough Si (0 0 1) surfaces: Isolated {1 0 5} facets as a kinetic factor of stress relaxation;Applied Surface Science;2023-01
2. Evolution of Ge Wetting Layers Growing on Smooth and Rough Si (001) Surfaces: Isolated {105} Facets as a Kinetic Factor of Stress Relaxation;SSRN Electronic Journal;2022
3. High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system;Nanotechnology;2021-12-22
4. Thickness-dependent elastic strain in Stranski–Krastanow growth;Physical Chemistry Chemical Physics;2020
5. Growth dynamics of C-induced Ge dots on Si1−xGex strained layers;Surface Science;2007-07
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