Growth dynamics of C-induced Ge dots on Si1−xGex strained layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities
2. Ge dots and nanostructures grown epitaxially on Si
3. Nanostructured surfaces: challenges and frontiers in nanotechnology
4. Ge dot organization on Si substrates patterned by focused ion beam
5. Structural properties of self-organized semiconductor nanostructures
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1. Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots;Applied Physics Letters;2013-10-28
2. Growth and self-organization of SiGe nanostructures;Physics Reports;2013-01
3. Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100);Physical Review B;2010-09-30
4. Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies;Nanotechnology;2007-10-17
5. Phonon pressure coefficient as a probe of the strain status of self-assembled quantum dots;Applied Physics Letters;2007-08-20
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