Millisecond fluorescence in InAs quantum dots embedded in AlAs-Reference-Cited by-同舟云学术

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Millisecond fluorescence in InAs quantum dots embedded in AlAs

Published:2004-01 Issue:3-4 Volume:20 Page:282-285
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Shamirzaev T.S,Gilinsky A.M,Toropov A.I,Bakarov A.K,Tenne D.A,Zhuravlev K.S,von Borczyskowski C,Zahn D.R.T

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Excited states and energy relaxation in stacked InAs/GaAs quantum dots

2. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

3. Microsecond carrier recombination times in InAs/AlAs quantum dots

4. The formation of inas quantum dotsin an aluminum oxide matrix

5. Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers

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2. AlInAs quantum dots;JETP Letters;2017-01

3. A Kinetic Rate Model of Novel Upconversion Nanostructures for High-Efficiency Photovoltaics;IEEE Journal of Photovoltaics;2016-09

4. Quantum dots with indirect band gap: power-law photoluminescence decay;World Journal of Engineering;2014-11-01

5. Power-law photoluminescence decay in quantum dots;AIP Conference Proceedings;2014

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