Microsecond carrier recombination times in InAs/AlAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1507620
Reference11 articles.
1. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
2. Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
3. Relaxation and recombination in ultrasmall InAs quantum dots
4. Self-assembled InAs/GaAs quantum dots under resonant excitation
5. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots
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1. Study of nanometer-scale structures and electrostatic properties of InAs quantum dots decorating GaAs/AlAs core/shell nanowires;Nanotechnology;2020-03-24
2. Optical quenching mechanism in InAs quantum dots in an Al0.95Ga0.05As matrix;Journal of the Korean Physical Society;2017-01
3. Radiative lifetimes and linewidth broadening of single InAs quantum dots in anAlxGa1−xAsmatrix;Journal of Luminescence;2016-08
4. Self-assembled Quantum Dots: From Stranski–Krastanov to Droplet Epitaxy;Self-Assembly of Nanostructures;2011-09-20
5. Effects of a InGaAs Strained Layer on Structures and Photoluminescence Characteristics of InAs Quantum Dots;Advanced Materials Research;2010-10
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