Excited states and energy relaxation in stacked InAs/GaAs quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.9050/fulltext
Reference54 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Critical layer thickness for self-assembled InAs islands on GaAs
4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
5. InAs/GaAs quantum dots radiative recombination from zero-dimensional states
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