Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures-Reference-Cited by-同舟云学术

Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures

Published:2004-06 Issue:1-2 Volume:23 Page:19-25
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Gökden Sibel

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. GaN based transistors for high power applications

2. Emerging gallium nitride based devices

3. Megawatt solid-state electronics

4. T.D. Moustakas, J.H. Pankove, Y. Hamakawa (Eds.), Wide band gap semiconductors, Symposia Proceedings No. 242, Materials Research Society, Pittsburgh, 1992.

5. Van de Walle (Ed.), Wide band gap semiconductors, in: Proceedings of the Seventh Trieste Semiconductor Symposium, 1992, North-Holland, Amsterdam, 1993; also published as Physica B 185 (1993).

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