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Demonstration of gating action in atomically controlled Si:P nanodots defined by scanning probe microscopy

  • Published:2008-03 Issue:5 Volume:40 Page:1006-1009
  • ISSN:1386-9477
  • Container-title:Physica E: Low-dimensional Systems and Nanostructures
  • language:en
  • Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Rueß Frank J.,Scappucci Giordano,Füchsle Martin,Pok Wilson,Fuhrer Andreas,Thompson Daniel L.,Reusch Thilo C.G.,Simmons Michelle Y.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Using Scanning Tunneling Microscopy to Realize Atomic- Scale Silicon Devices;Single-Atom Nanoelectronics;2013-04-17

2. Pt/ZnO Schottky nano-contact for piezoelectric nanogenerator;Physica E: Low-dimensional Systems and Nanostructures;2010-11

3. A low temperature surface preparation method for STM nano-lithography on Si(100);Applied Surface Science;2010-06

4. Theory of valley-orbit coupling in a Si/SiGe quantum dot;Physical Review B;2010-03-19

5. Single atom doping for quantum device development in diamond and silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008-11
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