The effects of depletion layer on negative differential conductivity in AlGaN/GaN high electron mobility transistor
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Undoped AlGaN/GaN HEMTs for microwave power amplification
3. AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy
4. DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration
5. Comprehensive analysis of small-signal parameters of fully strained and partially relaxed high Al-content lattice mismatched Al/sub m/Ga/sub 1-m/N/GaN HEMTs
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1. Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures;IEEE Transactions on Electron Devices;2018-03
2. Investigating the effects of capping layer on optical gain of nitride based semiconductor nanostructure lasers;Optical Materials;2017-04
3. Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors;Physica E: Low-dimensional Systems and Nanostructures;2012-09
4. Effect of AlGaN Barrier Thickness on the Cut Off Frequency of AlGaN/GaN High Electron Mobility Transistors;ECS Transactions;2012-03-16
5. Analytical-Numerical Model for the Total Mobility of AlGaN/GaN High Electron Mobility Transistors;ECS Transactions;2012-03-16
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