Analytical-Numerical Model for the Total Mobility of AlGaN/GaN High Electron Mobility Transistors

Abstract

An analytical- numerical model for the total mobility of AlGaN/GaN based high electron mobility transistors has been developed that is capable to predict accurately the effects of depletion layer thickness on the total mobility in different temperature , gate source biases. In addition taking into account the combined contributions from each of the individual electron scattering mechanisms. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well. Close agreement with the experimental data confirms the validity of the present model.