Reconfirmation of the band offsets of InGaP/GaAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Room temperature continuous wave operation of a heterojunction bipolar transistor laser
2. Preparation and characterisation of Au/InGaP/GaAs Schottky barriers for radiation damage investigation
3. Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells
4. Polarization threshold switches based on ordered GaInP
5. Determination of the valence band offset of MOVPE-grownIn0.48Ga0.52P∕GaAsmultiple quantum wells by admittance spectroscopy
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1. Challenges and strategies for implementing the vertical epitaxial heterostructure architechture (VEHSA) design for concentrated photovoltaic applications;Solar Energy Materials and Solar Cells;2018-07
2. High efficiency phototransducers based on a novel vertical epitaxial heterostructure architecture (VEHSA) with thin p/n junctions;Journal of Physics D: Applied Physics;2017-03-28
3. Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%;physica status solidi (RRL) - Rapid Research Letters;2016-12-16
4. High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%;Applied Physics Letters;2016-09-26
5. Impact of strain on the band offsets of important III–V quantum wells: InxGa1−xN/GaN, GaAs/InxGa1−xP and InxGa1−xAs/AlGaAs;Materials Science in Semiconductor Processing;2014-03
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